Luminescence properties of GaAs nanocrystals fabricated by sequential ion implantation

被引：6
|
作者：
Kanemitsu, Y [1 ]
Tanaka, H
Kushida, T
Min, KS
Atwater, HA
机构：
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan
[2] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA
来源：
JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷
关键词：
GaAs nanocrystal; ion implantation; hydrogen passivation;
D O I：
10.1016/S0022-2313(99)00452-4
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have studied photoluminescence (PL) properties of GaAs nanocrystals in SiO2 matrices formed by sequential ion implantation and thermal annealing. After thermal annealing at 900-1000 degrees C, broad PL due to GaAs nanocrystals appears in the red spectral region. The spectral shape of the red PL band depends on the hydrogen concentration in the sample. The hydrogen effect on GaAs nanocrystal luminescence will be discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：432 / 434
页数：3
相关论文
共 50 条
  • [11] Space-resolved photoluminescence of ZnS:Cu,Al nanocrystals fabricated by sequential ion implantation
    Ishizumi, A
    White, CW
    Kanemitsu, Y
    APPLIED PHYSICS LETTERS, 2004, 84 (13) : 2397 - 2399
  • [12] INFLUENCE OF ION-IMPLANTATION ON THE LUMINESCENCE OF GAAS
    SCIBIOR, H
    BRYLOWSKA, I
    MAZUREK, P
    SUBOTOWICZ, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 109 (02): : 597 - 601
  • [13] Synthesis and properties of GaAs nanocrystals in SiO2 formed by ion implantation
    Zhu, JG
    White, CW
    Wallis, DJ
    Budai, JD
    Withrow, SP
    Henderson, DO
    ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING, 1996, 396 : 447 - 452
  • [14] Conductivity type and crystal orientation of GaAs nanocrystals fabricated in silicon by ion implantation and flash lamp annealing
    Prucnal, S.
    Liedke, M. O.
    Zhou, Shengqiang
    Voelskow, M.
    Muecklich, A.
    Turek, M.
    Zuk, J.
    Skorupa, W.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 312 : 104 - 109
  • [15] Effect of Lithium Ion Implantation on the Luminescence Properties of InAs/GaAs Quantum Dots
    Upadhyay, S.
    Subrahmanyam, N. B. V.
    Gupta, S. K.
    Bhagwat, P.
    Chakrabarti, S.
    OPTICAL SENSING, IMAGING, AND PHOTON COUNTING: NANOSTRUCTURED DEVICES AND APPLICATIONS 2016, 2016, 9933
  • [16] INFLUENCE OF IN IRRADIATION AND RTA PROCESS ON OPTICAL PROPERTIES OF SILICON NANOCRYSTALS FABRICATED BY ION IMPLANTATION
    Hama, T.
    Iwayama, T. S.
    Hole, D. E.
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 28, 2010, 28 : 23 - 28
  • [17] Luminescence properties of ZnS:Mn nanocrystals embedded in SiO2 by ion implantation
    Chemam, R.
    Grob, J. J.
    Bouabellou, A.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 150 (01): : 26 - 31
  • [18] GAAS HALL ELEMENT FABRICATED BY ION-IMPLANTATION
    TANOUE, H
    TSURUSHIMA, T
    KATAOKA, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1188 - 1192
  • [19] Synthesis, structure and optical properties of GaN nanocrystals prepared by sequential ion implantation in dielectrics
    Borsella, E
    Toè, SD
    Mattei, G
    Maurizio, C
    Mazzoldi, P
    Saber, A
    Battaglin, GC
    Cattaruzza, E
    Gonella, F
    Quaranta, A
    D'Acapito, F
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 148 - 150
  • [20] Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing
    Shimizu-Iwayama, T
    Hama, T
    Hole, DE
    Boyd, IW
    SOLID-STATE ELECTRONICS, 2001, 45 (08) : 1487 - 1494
12345