Influences of Interface States on the Electrical Properties of Pt/SrTiO3 Junctions

被引：0
|
作者：
Lee, Sungjoo [1 ]
Phark, Soo-Hyon [2 ]
Kim, Dong-Wook [3 ]
机构：
[1] Hanyang Univ, Dept Appl Phys, Ansan 426791, South Korea
[2] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
[3] Ewha Womans Univ, Dept Chem & Nano Sci, Dept Phys, Seoul 120750, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2010年 / 56卷 / 01期
关键词：
Resistance switching; SrTiO3; Junction;
D O I：
10.3938/jkps.56.362
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report on the electrical properties of Pt/Nb-doped SrTiO3 single crystal junctions. The junctions showed rectifying current (I) - voltage (V) characteristics, indicating formation of Schottky diodes. The junction also exhibited hysteretic transport behaviors upon polarity reversal. The junction capacitance measured at 1 MHz was much smaller than those at 1 similar to 100 kHz. The frequency dependence revealed that deep-level trap states existed in the junctions, and that those interface states affected the electrical properties of the junctions significantly.
引用
收藏
页码：362 / 365
页数：4
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