Metal plasma source ion implantation using a UBM cathode

A brief description is given of an industrial prototype DLZ-01 PSII implanter which uses a radio frequency source for enhancing plasma production and four unbalanced magnetron (UBM) cathodes for metal particle achievement. The emphasis of this description is put on the structural traits of UBM cathodes and the metal plasma properties. The characteristics of this method are also discussed. For preliminary research, the same UBM deposition and fixed implantation parameters are selected. The characteristics of the UBM cathodes are described using the unbalanced magnetic field distribution. The ionization determined by the detection of the deposition rate and saturation current is very small (<0.1). Metal plasma source ion implantation (MePSII) processing is demonstrated by the implantation of Cu particles into Ag substrates and is compared with the deposition of Cu films by the UBM cathode at the same UBM sputtering. The depth profiles of Cu in Ag with different deposition rates are measured using XPS. If we evaluate the results in summary form, we see that this implantation could be defined as the sum of Cu deposition and recoil implantation and ion mixing by Ar+. With decreasing deposition rates, pure Cu films disappear gradually. even the pure implantation takes place. In addition, no new phase is found in the transition layer. (C) 2000 Published by Elsevier Science S.A. All rights reserved.