Evidence of bimodal crystallite size distribution in μc-Si:H films

被引:6
|
作者
Ram, Sanjay K. [1 ]
Islam, Md Nazrul [2 ]
Kumar, Satyendra [3 ]
Roca i Cabarrocas, P. [1 ]
机构
[1] Ecole Polytech, CNRS, Phys Interfaces & Couches Minces Lab, UMR 7644, F-91128 Palaiseau, France
[2] ISRO, Ctr Space Applicat, SRG, QAED, Ahmadabad 380015, Gujarat, India
[3] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
关键词
Silicon; Thin films; Structural properties; Ellipsometry; Atomic force microscopy (AFM); Raman spectroscopy; CHEMICAL-VAPOR-DEPOSITION; MICROCRYSTALLINE SILICON; SPECTROSCOPIC ELLIPSOMETRY; MICROSTRUCTURE; TRANSPORT; GROWTH; PHASE;
D O I
10.1016/j.mseb.2008.11.048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the microstructural characterization studies carried out on plasma deposited highly crystalline undoped microcrystalline silicon films to explore the crystallite size distribution present in this material. The modeling of results of spectroscopic ellipsometry using two different sized crystallites is corroborated by the deconvolution of experimental Raman profiles using a modeling method that incorporates a bimodal size distribution of crystallites. The presence of a bimodal size distribution of crystallites is demonstrated as well by the results of atomic force microscopy and X-ray diffraction studies. The qualitative agreement between the results of different studies is discussed. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:34 / 37
页数:4
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