Evidence of bimodal crystallite size distribution in μc-Si:H films

被引:6
|
作者
Ram, Sanjay K. [1 ]
Islam, Md Nazrul [2 ]
Kumar, Satyendra [3 ]
Roca i Cabarrocas, P. [1 ]
机构
[1] Ecole Polytech, CNRS, Phys Interfaces & Couches Minces Lab, UMR 7644, F-91128 Palaiseau, France
[2] ISRO, Ctr Space Applicat, SRG, QAED, Ahmadabad 380015, Gujarat, India
[3] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
关键词
Silicon; Thin films; Structural properties; Ellipsometry; Atomic force microscopy (AFM); Raman spectroscopy; CHEMICAL-VAPOR-DEPOSITION; MICROCRYSTALLINE SILICON; SPECTROSCOPIC ELLIPSOMETRY; MICROSTRUCTURE; TRANSPORT; GROWTH; PHASE;
D O I
10.1016/j.mseb.2008.11.048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the microstructural characterization studies carried out on plasma deposited highly crystalline undoped microcrystalline silicon films to explore the crystallite size distribution present in this material. The modeling of results of spectroscopic ellipsometry using two different sized crystallites is corroborated by the deconvolution of experimental Raman profiles using a modeling method that incorporates a bimodal size distribution of crystallites. The presence of a bimodal size distribution of crystallites is demonstrated as well by the results of atomic force microscopy and X-ray diffraction studies. The qualitative agreement between the results of different studies is discussed. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:34 / 37
页数:4
相关论文
共 50 条
  • [21] Structural characterization of μc-Si:H films produced by RF magnetron sputtering
    Cerqueira, MF
    Ferreira, JA
    Andritschky, M
    Costa, MFM
    MICROELECTRONIC ENGINEERING, 1998, 43-4 : 627 - 634
  • [22] Metastability of a-SiOx:H thin films for c-Si surface passivation
    Serenelli, L.
    Martini, L.
    Imbimbo, L.
    Asquini, R.
    Menchini, F.
    Izzi, M.
    Tucci, M.
    APPLIED SURFACE SCIENCE, 2017, 392 : 430 - 440
  • [23] Structural, optical and electrical characterizations of μc-Si:H films deposited by PECVD
    Ambrosone, G
    Coscia, U
    Murri, R
    Pinto, N
    Ficcadenti, M
    Morresi, L
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2005, 87 (1-4) : 375 - 386
  • [24] Characterization and application of a-SiCx:H films for the passivation of the c-Si surface
    Martín, I
    Vetter, M
    Orpella, A
    Puigdollers, J
    Voz, C
    Marsal, LF
    Pallarès, J
    Alcubilla, R
    THIN SOLID FILMS, 2002, 403 : 476 - 479
  • [25] Varied longitudinal microstructure of μc-Si:H films by tuning substrate temperature
    Lu, Y.
    Li, H.
    Yang, G.
    SURFACE ENGINEERING, 2015, 31 (10) : 763 - 769
  • [26] Study of μc-Si:H Thin Films Prepared by RF-PECVD
    Wang, Xiaojing
    POWER AND ENERGY SYSTEMS III, 2014, 492 : 235 - 238
  • [27] High-Efficiency a-Si:H/μc-Si:H Solar Cells by Optimizing a-Si:H and μc-Si:H Sub-cells
    Hou, Guofu
    Zhang, Xiaodan
    Han, Xiaoyan
    Li, Guijun
    Geng, Xinhua
    Chen, Xinliang
    Zhao, Ying
    2013 IEEE INTERNATIONAL CONFERENCE ON ELECTRO-INFORMATION TECHNOLOGY (EIT 2013), 2013,
  • [28] Microstructure and surface roughness study of highly crystallized μc-Si:H Films
    Ram, Sanjay K.
    Kumar, Satyendra
    Deva, Dinesh
    Cabarrocas, P. Roca i
    THIN SOLID FILMS, 2007, 515 (19) : 7619 - 7624
  • [29] Concentration-dependent study of electronic and optical properties of c-Si and c-Si: H
    Nunez-Gonzalez, R.
    Posada-Amarillas, A.
    Galvan, D. H.
    Reyes-Serrato, A.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (07): : 1712 - 1717
  • [30] Ultrathin μc-Si films deposited by PECVD
    Rizzoli, R
    Summonte, C
    Piá, J
    Centurioni, E
    Ruani, G
    Desalvo, A
    Zignani, F
    THIN SOLID FILMS, 2001, 383 (1-2) : 7 - 10