Electrical properties of Schottky diode Pt/SiC and Pt/porous SiC performed on highly resistif p-type 6H-SiC

被引：13
|
作者：
Bourenane, K. [1 ]
Keffous, A. [1 ]
Nezzal, G. [1 ]
机构：
[1] UDTS, Algiers, Alger, Algeria
来源：
VACUUM | 2007年 / 81卷 / 05期
关键词：
silicon carbide; Schottky diode; platinum; porous silicon carbide;
D O I：
10.1016/j.vacuum.2006.09.009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the electrical characteristics of two different Schottky diode as Pt/SiC and Pt/porous SiC, elaborated on highly resistif hot-pressed p-type 6H-SiC supplied by Goodfellow. The Schottky diode was characterized in air ambient and in vacuum, this latter could be used for exhaust gas monitoring as gas sensors for different gas (O-2, H-2, CO, CO2 and hydrocarbure). The result shows an ideality factor in ranae 1.1-1.5 with a barrier height varying between 0.780 and 0.950eV function of the ambient characterization. The result indicated clearly the dependence of electrical parameters on the surface whose Schottky contact was realized (Pt) and on the ambient where the electrical tests were performed. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：663 / 668
页数：6
相关论文
共 50 条
  • [21] SCHOTTKY-BARRIER HEIGHT OF METAL CONTACTS TO P-TYPE ALPHA 6H-SIC
    WALDROP, JR
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (09) : 4548 - 4550
  • [22] Schottky barriers on 6H-SiC
    Fröjdh, C
    Thungström, G
    Nilsson, HE
    Petersson, CS
    PHYSICA SCRIPTA, 1999, T79 : 297 - 302
  • [23] Thermal stability of Ru, Pd and Al Schottky contacts to p-type 6H-SiC
    Venter, A
    Samji, ME
    Leitch, AWR
    CONFERENCE ON PHOTO-RESPONSIVE MATERIALS, PROCEEDINGS, 2004, : 2264 - 2268
  • [24] High voltage Schottky barrier diodes on p-type 4H and 6H-SiC
    Raghunathan, R
    Baliga, BJ
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 933 - 936
  • [25] Characterization of highly doped n- and p-type 6H-SiC piezoresistors
    Okojie, RS
    Ned, AA
    Kurtz, AD
    Carr, WN
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) : 785 - 790
  • [26] P-type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
    Lebedev, S. P.
    Lebedev, A. A.
    Abramov, P. L.
    Bogdanova, E. V.
    Nel'son, D. K.
    Oganesyan, G. A.
    Tregubova, A. S.
    Yakimova, R.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 177 - 180
  • [27] NO gas detection at high temperature using thin-Pt 4H-SiC and 6H-SiC schottky diodes
    Khan, SA
    de Vasconcelos, EA
    Uchida, H
    Katsube, T
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 961 - 964
  • [28] Hydrogen passivation in n- and p-type 6H-SiC
    Ren, F
    Grow, JM
    Bhaskaran, M
    Wilson, RG
    Pearton, SJ
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 198 - 202
  • [29] Hydrogen passivation in n- and p-type 6H-SiC
    F. Ren
    J. M. Grow
    M. Bhaskaran
    R. G. Wilson
    S. J. Pearton
    Journal of Electronic Materials, 1997, 26 : 198 - 202
  • [30] A study on the photoluminescence properties of porous 6H-Sic(p) and Sic film on p-Si substrate
    Bourenane, K.
    Keffous, A.
    Kechouane, M.
    Bourenane, A.
    Nezzal, G.
    Boukezzata, A.
    MODERN PHYSICS LETTERS B, 2008, 22 (06): : 415 - 424
12345