Applications of Carbon-Nanotubes in CMOS Interconnect Technology Enhancement

被引：0

作者：

Raju, Salahuddin ^{[1
]}

Zhou, Changjian ^{[1
]}

Li, Suwen ^{[1
]}

Chan, Mansun ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Clear Water Bay, Hong Kong, Peoples R China

来源：

2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The application of carbon-nanotube to reduce interconnect delay is studied in this work, with the emphasis on how it can be used to reduce the inter-metal capacitance. By forming vertically aligned cylindrical pores assisted by vertically grown CNT, mechanically stable ultra-low-k interlayer dielectric with k-value down to 1.89 is experimentally demonstrated. Ways to integrate this process will other CNT enhanced interconnect technology are also discussed.

引用

页码：528 / 530

页数：3

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