Applications of Carbon-Nanotubes in CMOS Interconnect Technology Enhancement

The application of carbon-nanotube to reduce interconnect delay is studied in this work, with the emphasis on how it can be used to reduce the inter-metal capacitance. By forming vertically aligned cylindrical pores assisted by vertically grown CNT, mechanically stable ultra-low-k interlayer dielectric with k-value down to 1.89 is experimentally demonstrated. Ways to integrate this process will other CNT enhanced interconnect technology are also discussed.