Low-frequency noise analysis of Si/SiGe channel pMOSFETs

被引：9
|
作者：
Li, PW [1 ]
Liao, WM [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli 320, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 12期
关键词：
flicker noise; 1/f noise; SiGe; MOSFETs;
D O I：
10.1016/S0038-1101(02)00231-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-frequency noise characteristics of 0.1 mum Si1-xGex channel pMOSFETs were studied by numerical simulations in the framework of the carrier number fluctuation model as well as the correlated fluctuation in the mobility model. Simulation results predict that Si1-xGex channel pMOSFETs could offer improved low-frequency noise performance as compared to the conventional bulk Si devices. This improvement in Si1-xGex channel pMOSFETs could be attributed to less effective oxide trap density for noise generation due to the increasing separation of quasi-Fermi level and valence band edge at Si-SiO2 interface by Ge-induced band offset. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：2281 / 2285
页数：5
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