Performance Considerations for Photogate Based Active Pixel Sensors

被引：0

作者：

Spickermann, Andreas ^{[1
]}

Hosticka, Bedrich J. ^{[1
]}

Grabmaier, Anton ^{[1
]}

机构：

[1] Fraunhofer Inst Microelect Circuits & Syst IMS, Duisburg, Germany

来源：

PRIME: PROCEEDINGS OF THE CONFERENCE 2009 PHD RESEARCH IN MICROELECTRONICS AND ELECTRONICS | 2009年

关键词：

CMOS PHOTOGATE; IMAGE SENSORS;

D O I：

10.1109/RME.2009.5201359

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photogate based active pixel sensors (PG APS) are often used in CMOS imaging. In advanced applications (e.g. high-speed imaging or time-of-flight distance measurements) the pixel performance requirements are high, especially as far as the optical sensitivity of the PG and the transfer and readout speed of photogenerated charge carriers are concerned. In this contribution we investigate the electrical and optical performances of different PG based pixel configurations fabricated in the 0.35 mu m CMOS process available at the Fraunhofer IMS. Finally, we propose a high resistivity polysilicon gate based pixel structure to be applied in 3-D time-of-flight (ToF) measurements, that yields an enhanced charge transfer speed.

引用

页码：216 / 219

页数：4

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