Total dose effects on CMOS active pixel sensors

被引：26

作者：

Bogaerts, J ^{[1
]}

Dierickx, B ^{[1
]}

机构：

[1] Imec, B-3001 Louvain, Belgium

来源：

SENSORS AND CAMERA SYSTEMS FOR SCIENTIFIC, INDUSTRIAL AND DIGITAL PHOTOGRAPHY APPLICATIONS | 2000年 / 3965卷

关键词：

CMOS image sensors; APS; total ionizing dose; dark current;

D O I：

10.1117/12.385432

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Co-60 irradiations have been carried out on test structures for the development of CMOS Active Pixel Sensors (APS) that can be used in a radiation environment. The basic mechanisms that may cause failure are presented. Ionization induced damage effects such as field leakage currents and dark current increase are discussed in detail. Two different approaches to overcome these problems are considered and their advantages and disadvantages are compared. Total dose results are presented on a pixel that can tolerate more than 200 kGy(Si) (20 Mrad(Si)) from a Co-60 source.

引用

页码：157 / 167

页数：11

共 50 条

[1] Dose Effects on CMOS Active Pixel Sensors
Dhombres, S.
Michez, A.
Boch, J.
Beauvivre, S.
Vaille, J-R.
Touboul, A. D.
Adell, P. C.
Bezerra, F.
Lorfevre, E.
Kraehenbuehl, D.
Saigne, F.
[J]. 2015 15TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2015,
[2] CMOS active pixel image sensors
Fossum, ER
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 395 (03): : 291 - 297
[3] Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors
马林东
李豫东
郭旗
文林
周东
冯婕
刘元
曾骏哲
张翔
王田珲
[J]. Chinese Physics B, 2017, 26 (11) : 268 - 272
[4] Hot carriers effects and electroluminescence in the CMOS photodiode active pixel sensors
Maëtre, S
Magnan, P
Lavernhe, F
Corbièe, F
[J]. SENSORS AND CAMERA SYSTEMS FOR SCIENTIFIC, INDUSTRIAL, AND DIGITAL PHOTOGRAPHY APPLICATIONS IV, 2003, 5017 : 59 - 67
[5] Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors
Ma, Lindong
Li, Yudong
Guo, Qi
Wen, Lin
Zhou, Dong
Feng, Jie
Liu, Yuan
Zeng, Junzhe
Zhang, Xiang
Wang, Tianhui
[J]. CHINESE PHYSICS B, 2017, 26 (11)
[6] A toolkit to demystify CMOS Active Pixel Sensors
Galliere, J. -M.
Boch, J.
[J]. 2013 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC SYSTEMS EDUCATION (MSE), 2013, : 25 - 27
[7] CMOS active pixel sensors for ionising radiation
Evans, DA
Allport, PP
Casse, G
Faruqi, AR
Gallop, B
Henderson, R
Prydderch, M
Turchetta, R
Tyndel, M
Velthuis, J
Villani, G
Waltham, N
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 546 (1-2): : 281 - 285
[8] Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose
Goiffon, Vincent
Estribeau, Magali
Marcelot, Olivier
Cervantes, Paola
Magnan, Pierre
Gaillardin, Marc
Virmontois, Cedric
Martin-Gonthier, Philippe
Molina, Romain
Corbiere, Franck
Girard, Sylvain
Paillet, Philippe
Marcandella, Claude
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (06) : 2878 - 2887
[9] Photoresponse analysis and pixel shape optimization for CMOS active pixel sensors
Shcherback, I
Yadid-Pecht, O
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (01) : 12 - 18
[10] Active-pixel CMOS sensors improve their image
Zarnowski, J
Pace, M
Joyner, M
[J]. LASER FOCUS WORLD, 1999, 35 (07): : 111 - 114

← 1 2 3 4 5 →