CMOS active pixel sensors for ionising radiation

被引:11
|
作者
Evans, DA
Allport, PP
Casse, G
Faruqi, AR
Gallop, B
Henderson, R
Prydderch, M
Turchetta, R
Tyndel, M
Velthuis, J
Villani, G
Waltham, N
机构
[1] Univ Liverpool, Dept Phys & Astron, Liverpool L69 3BX, Merseyside, England
[2] MRC, Mol Biol Lab, London W1N 4AL, England
[3] Univ Birmingham, Birmingham, W Midlands, England
[4] Rutherford Appleton Lab, Didcot, Oxon, England
关键词
Monolithic Active Pixel Sensors; vertex detector; linear collider; electron microscopy;
D O I
10.1016/j.nima.2005.03.108
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Monolithic Active Pixel Sensors (MAPS) take advantage of recent developments in deep sub-micron VLSI technology. CMOS sensors now enjoy widespread commercial applications as inexpensive visible light-imaging devices. These are also being utilised and developed for an increasing number of scientific fields due to advantages which include: low power consumption, radiation hardness, small pixel size and on-chip or even in-pixel processing capabilities. We have designed, characterised and evaluated a number of prototype CMOS MAPS devices as position-sensitive detectors for ionising radiation. This development was primarily driven by the requirements of the Linear Collider vertex detector but a broader spectrum of applications, including several outside particle physics, has been explored and some of these are also briefly presented here. (c) 2005 Published by Elsevier B.V.
引用
收藏
页码:281 / 285
页数:5
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