Light-hole resonant tunneling through a tensile-strained GaAsP quantum well

被引：2
|
作者：
Lampin, JF
Mollot, F
机构：
[1] Inst. d'Electron. Microlectron. Nord, U.M.R. C.N.R.S. 9929, 59652 Villeneuve d'Ascq Cédex, Avenue Poincaré
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 08期
关键词：
D O I：
10.1063/1.119734
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the demonstration of resonant tunneling of holes through an AlAs/GaAs0.7P0.3 double-barrier heterostructure. The tensile strain in the quantum well is large enough to reverse the order of the light-and heavy-hole levels (the first light-hole level is the ground state), The I(V) characteristic of this structure is measured and compared to a standard AlAs/GaAs unstrained one, As expected, the peak current density of the first light-hole resonance and its peak-to-valley current ratio are enhanced (they reach 28 A/cm(2) and 3.4:1 at 15 K), Negative differential resistance is observed up to 250 K. (C) 1997 American Institute of Physics.
引用
收藏
页码：1080 / 1082
页数：3
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