Fabrication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs (vol 60, 120502, 2021)

被引：0
|
作者：
Uesugi, Kenjiro [1 ,2 ]
Miyake, Hideto [2 ,3 ]
机构：
[1] Mie Univ, Strateg Planning Off Reg Revitalizat, Tsu, Mie 5148507, Japan
[2] Mie Univ, Grad Sch Reg Innovat Studies, Tsu, Mie 5148507, Japan
[3] Mie Univ, Grad Sch Engn, Tsu, Mie 5148507, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2022年 / 61卷 / 07期
关键词：
D O I：
10.35848/1347-4065/ac72df
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页数：1
相关论文
共 23 条
  • [1] Fablication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs
    Uesugi, Kenjiro
    Miyake, Hideto
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (12)
  • [2] Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
    Miyake, Hideto
    Lin, Chia-Hung
    Tokoro, Kenta
    Hiramatsu, Kazumasa
    [J]. JOURNAL OF CRYSTAL GROWTH, 2016, 456 : 155 - 159
  • [3] Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing
    Shojiki, Kanako
    Uesugi, Kenjiro
    Xiao, Shiyu
    Miyake, Hideto
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 166
  • [4] High-Quality AlN Template Prepared by Face-to-Face Annealing of Sputtered AlN on Sapphire
    Shojiki, Kanako
    Uesugi, Kenjiro
    Kuboya, Shigeyuki
    Inamori, Takafumi
    Kawabata, Shin
    Miyake, Hideto
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2021, 258 (02):
  • [5] Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing
    Uesugi, Kenjiro
    Hayashi, Yusuke
    Shojiki, Kanako
    Xiao, Shiyu
    Nagamatsu, Kentaro
    Yoshida, Harumasa
    Miyake, Hideto
    [J]. JOURNAL OF CRYSTAL GROWTH, 2019, 510 : 13 - 17
  • [6] Fabrication of c-AlN/a-Sapphire Templates by Sputtering and High-Temperature Annealing
    Hayashi, Yusuke
    Fujikawa, Kaito
    Uesugi, Kenjiro
    Shojiki, Kanako
    Miyake, Hideto
    [J]. 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [7] Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD
    Yoshinaga, J.
    Ikejiri, K.
    Koseki, S.
    Uesugi, K.
    Miyake, H.
    [J]. GALLIUM NITRIDE MATERIALS AND DEVICES XIX, 2024, 12886
  • [8] Suppression of leakage current increase of 4H-SiC Schottky barrier diodes during high-temperature annealing by "face-to-face" arrangement
    Izumi, S
    Fujisawa, H
    Tawara, T
    Ueno, K
    Hiraoka, M
    [J]. SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 685 - 688
  • [9] Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates
    Murotani, Hideaki
    Fujii, Atsushi
    Oshimura, Ryota
    Kusaba, Takafumi
    Uesugi, Kenjiro
    Miyake, Hideto
    Yamada, Yoichi
    [J]. APPLIED PHYSICS EXPRESS, 2021, 14 (12)
  • [10] Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High-Temperature Annealing
    Hakamata, Junya
    Kawase, Yuta
    Dong, Lin
    Iwayama, Sho
    Iwaya, Motoaki
    Takeuchi, Tetsuya
    Kamiyama, Satoshi
    Miyake, Hideto
    Akasaki, Isamu
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (05):
123