Suppression of leakage current increase of 4H-SiC Schottky barrier diodes during high-temperature annealing by "face-to-face" arrangement

被引：0

作者：

Izumi, S ^{[1
]}

Fujisawa, H ^{[1
]}

Tawara, T ^{[1
]}

Ueno, K ^{[1
]}

Hiraoka, M ^{[1
]}

机构：

[1] Fuji Elect Corp Res & Dev Ltd, Yokosuka, Kanagawa 2400194, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷

关键词：

high temperature annealing; leakage current; Schottky barrier diodes; surface morphology;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ni/4H-SiC Schottky barrier diodes (SBDs) were fabricated by using "face-to-face" annealing technique. As a result, we can obtain the SBDs with low leakage current in the covered area of the bottom chip reproducibly. The leakage current of this area is comparable to that of the samples without annealing. We found that the surface of this area was etched during annealing, and the increase in surface roughness was suppressed.

引用

页码：685 / 688

页数：4

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