Performance Improvement of Composition-Graded AlGaAsSb/InP Double Heterojunction Bipolar Transistors

被引：7
|
作者：
Wu, Bing-Ruey [1 ]
Dvorak, Martin W. [1 ]
Colbus, Patrick [1 ]
Low, T. S. [1 ]
D'Avanzo, Don [1 ]
机构：
[1] Agilent Technol, TSO Adv Dev, HFTC, Santa Rosa, CA 95403 USA
来源：
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年
关键词：
GHZ; DHBTS; BASE; F(T);
D O I：
10.1109/ICIPRM.2009.5012409
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Compositional graded base AlxGa1-xAsSb/InP DHBT is demonstrated to show DC current gain of similar to 100 with 300 angstrom base and base sheet resistance of 1000 Omega/square. The improvement is more than 50% compared to uniform base GaAsSb/InP DHBT with the same base thickness and sheet resistance.
引用
收藏
页码：20 / 23
页数：4
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