InP double heterojunction bipolar transistors for terahertz computed tomography

被引：1

作者：

Coquillat, Dominique ^{[1
]}

Duhant, Alexandre ^{[2
,3
]}

Triki, Meriam ^{[2
]}

Nodjiadjim, Virginie ^{[4
]}

Konczykowska, Agnieszka ^{[4
]}

Riet, Muriel ^{[4
]}

Dyakonova, Nina ^{[1
]}

Strauss, Olivier ^{[3
]}

Knap, Wojciech ^{[1
]}

机构：

[1] Univ Montpellier, CNRS, Lab Charles Coulomb L2C, Montpellier, France

[2] T Waves Technol, Dept Res & Dev, Montpellier, France

[3] Univ Montpellier, CNRS, LIRMM, Montpellier, France

[4] III V Lab, Campus Polytech,1 Ave Augustin Fresnel, Palaiseau, France

来源：

AIP ADVANCES | 2018年 / 8卷 / 08期

关键词：

TECHNOLOGY; RADIATION; DETECTORS;

D O I：

10.1063/1.5039331

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present experimental studies of terahertz radiation detection by InP double heterojunction based transistors. We analyze the relation between their static characteristics and the experimentally determined voltage and current responsivities, showing importance of internal device parasitic capacitances and the external circuit loading effects. Finally, we demonstrate the use of these transistors for terahertz radiation computed tomography leading to 3D visualization of concealed objects. Our results pave the way towards wide use of heterojunction based transistors for terahertz imaging. (C) 2018 Author(s).

引用

页数：8

共 50 条

[1] High-speed InP-based double heterojunction bipolar transistors and varactors for three-dimensional Terahertz computed tomography
Coquillat, Dominique
Nodjiadjim, Virginie
Duhant, Alexandre
Triki, Meriam
Strauss, Olivier
Konczykowska, Agnieszka
Riet, Muriel
Dyakonova, Nina
Knap, Wojciech
[J]. 2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2017,
[2] InP/GaAsSb/InP double heterojunction bipolar transistors
Bolognesi, CR
Dvorak, MW
Watkins, SP
[J]. IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 343 - 351
[3] InP/GaAsSb/InP double heterojunction bipolar transistors (invited)
Bolognesi, CR
Dvorak, MW
Watkins, SP
[J]. GAAS IC SYMPOSIUM - 24TH ANNUAL, TECHNICAL DIGEST 2002, 2002, : 265 - 268
[4] Optimization of direct current performance in terahertz InGaAs/InP double-heterojunction bipolar transistors
Chiang, Han-Wei
Rode, Johann C.
Choudhary, Prateek
Rodwell, Mark J. W.
[J]. JOURNAL OF APPLIED PHYSICS, 2014, 116 (16)
[5] Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors
Dvorak, MW
Matine, N
Bolognesi, CR
Xu, XG
Watkins, SP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (02): : 761 - 764
[6] High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors
Coquillat, D.
Nodjiadjim, V.
Blin, S.
Konczykowska, A.
Dyakonova, N.
Consejo, C.
Nouvel, P.
Penarier, A.
Torres, J.
But, D.
Ruffenach, S.
Teppe, F.
Riet, M.
Muraviev, A.
Gutin, A.
Shur, M.
Knap, W.
[J]. FUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES, 2017, 58 : 1 - 9
[7] Improved InP-based double heterojunction bipolar transistors
Lin, Y. S.
Huang, J. H.
Ho, C. H.
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5, 2007, 4 (05): : 1680 - +
[8] Physical origins of nonlinearity in InP double heterojunction bipolar transistors
Xu, H.
Iverson, E. W.
Cheng, K. Y.
Feng, M.
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (11)
[9] Lateral carrier diffusion and current gain in terahertz InGaAs/InP double-heterojunction bipolar transistors
Chiang, Han-Wei
Rode, Johann C.
Choudhary, Prateek
Rodwell, Mark J. W.
[J]. JOURNAL OF APPLIED PHYSICS, 2014, 115 (03)
[10] An improved model for InP/InGaAs double heterojunction bipolar transistors
Shi, Yuxia
Jin, Zhi
Su, Yongbo
Cao, Yuxiong
Wang, Yan
[J]. SOLID-STATE ELECTRONICS, 2013, 81 : 163 - 169

← 1 2 3 4 5 →