InP double heterojunction bipolar transistors for terahertz computed tomography

被引：1

作者：

Coquillat, Dominique ^{[1
]}

Duhant, Alexandre ^{[2
,3
]}

Triki, Meriam ^{[2
]}

Nodjiadjim, Virginie ^{[4
]}

Konczykowska, Agnieszka ^{[4
]}

Riet, Muriel ^{[4
]}

Dyakonova, Nina ^{[1
]}

Strauss, Olivier ^{[3
]}

Knap, Wojciech ^{[1
]}

机构：

[1] Univ Montpellier, CNRS, Lab Charles Coulomb L2C, Montpellier, France

[2] T Waves Technol, Dept Res & Dev, Montpellier, France

[3] Univ Montpellier, CNRS, LIRMM, Montpellier, France

[4] III V Lab, Campus Polytech,1 Ave Augustin Fresnel, Palaiseau, France

来源：

AIP ADVANCES | 2018年 / 8卷 / 08期

关键词：

TECHNOLOGY; RADIATION; DETECTORS;

D O I：

10.1063/1.5039331

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present experimental studies of terahertz radiation detection by InP double heterojunction based transistors. We analyze the relation between their static characteristics and the experimentally determined voltage and current responsivities, showing importance of internal device parasitic capacitances and the external circuit loading effects. Finally, we demonstrate the use of these transistors for terahertz radiation computed tomography leading to 3D visualization of concealed objects. Our results pave the way towards wide use of heterojunction based transistors for terahertz imaging. (C) 2018 Author(s).

引用

页数：8

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