MOS technology: Trends and challenges in the ULSI era

被引：7
|
作者：
Shah, A
Yang, P
机构：
[1] Semiconductor Process and Device Center, Texas Instruments Inc., Dallas
来源：
MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 09期
关键词：
D O I：
10.1016/S0026-2714(97)00002-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews the trends in the MOS technology as we approach the turn of the century, and addresses the challenges that we face as the device geometries continue to scale and as the need to lower power dissipation grows, albeit with the demand for increasing device performance. (C) 1995 IEEE. Published by Elsevier Science Ltd.
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页码：1301 / 1307
页数：7
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