Optical properties of Pb(Zr0.53Ti0.47)O3 thin films on Pt-coated Si substrates measured by spectroscopic ellipsometry in the UV-vis-NIR region

被引:16
|
作者
Jiang, Y. P.
Tang, X. G.
Liu, Q. X.
Li, Q.
Ding, A. L.
机构
[1] Guangdong Univ Technol, Sch Phys & Optoelect Engn, Guangzhou 510090, Guangdong, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
关键词
PZT films; sol-gel; spectroscopic ellipsometry; refractive index; absorption bandgap;
D O I
10.1016/j.mseb.2006.11.025
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pb(Zr0.53Ti0.47)O-3 (PZT) thin films grown on Pt-coated Si substrates were prepared by a sol-gel process. Crystalline structure characterisation and optical constants (refractive index n, extinction coefficient k) and bandgaps E-g of PZT thin films annealed at 550, 600 and 650 degrees C were obtained by X-ray diffraction (XRD) and spectroscopic ellipsometry (SE) in the UV-vis and near-infrared range of 235-1700 nm. A four-phase fitting model was employed to describe the optical properties of the PZT thin films; the spectra of their optical constants and the bandgap energy E-g were determined by means of optimisation. The refractive index n, absorption coefficient a and bandgaps E-g of crystalline PZT thin films on Pt-coated Si substrates annealed at 550-650 degrees C are lager than that of pure PbZrO3 and PbTiO3 thin films. In addition, the refractive index dispersion data related to the structure of the films agreed well with Cauchy dispersion relationship. The dependencies of the refractive index, the extinction coefficient and the optical bandgap energy on annealing temperature were analysed. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:304 / 309
页数:6
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