Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

被引：70
|
作者：
D'Costa, V. R. [1 ]
Fang, Y. -Y. [2 ]
Tolle, J. [2 ]
Kouvetakis, J. [2 ]
Menendez, J. [1 ]
机构：
[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
[2] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 09期
关键词：
Group-IV semiconductors; Semiconductor alloys; DEFORMATION POTENTIALS; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; GERMANIUM; PRESSURE; SILICON; SI; OFFSETS; SYSTEM; MODEL;
D O I：
10.1016/j.tsf.2009.09.149
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ternary GeSiSn alloys have been recently demonstrated on Ge- and GeSn-buffered Si substrates These alloys, with a two-dimensional compositional space, make it possible to decouple lattice constant and electronic structure for the first time in a group-IV system This paper reviews the basic properties of the GeSiSn alloy. presents some new results on its optical properties, and discusses the approach that has been followed to model heterostrcutures containing GeSiSn layers for applications in modulators, quantum cascade lasers, and photovoltaics. (c) 2009 Elsevier B.V. All rights reserved
引用
收藏
页码：2531 / 2537
页数：7
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