DIRECT-GAP GROUP-IV SEMICONDUCTORS BASED ON TIN

被引：64
|
作者：
GOODMAN, CHL
机构：
来源：
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1982年 / 129卷 / 05期
关键词：
D O I：
10.1049/ip-i-1.1982.0043
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：189 / 192
页数：4
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