SUPERLATTICES OF GROUP-IV ELEMENTS, A NEW POSSIBILITY TO PRODUCE DIRECT BAND-GAP MATERIAL

被引：10
|
作者：
KASPER, E
机构：
[1] Daimler Benz Research Institute, Ulm
来源：
PHYSICA SCRIPTA | 1991年 / T35卷
关键词：
D O I：
10.1088/0031-8949/1991/T35/048
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The diamond lattice type group IV semiconductors C, SiC, Si and Ge exhibit an indirect band gap with the conduction band minimum outside the Brillouin zone center. Ultrathin superlattices are predicted to convert the indirect band gap into a quasi-direct one under certain circumstances. Growth of Si/Ge strained monolayer superlattices (SMS) by molecular beam epitaxy is explained, and experimental results obtained with these structures are discussed.
引用
收藏
页码：232 / 236
页数：5
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