Etching of DLC films using a low intensity oxygen plasma jet

This article describes the characteristics of the etching process of diamond-like carbon (DLC) films using a new plasma system based on an oxygen plasma jet which comprises charged particles and activated neutral species in a range of energies and fluxes suitable for the etching process. This plasma source was used to etch DLC films which were grown on silicon substrates by magnetron sputtering technique. Prior to etching these films were characterized by different methods, namely Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), current x voltage curves and atomic force microscopy (AFM). Etch rates in the range 7.0-25 nm/min were measured for substrates placed at different positions along the axis of the plasma jet. An attractive feature observed in this work was the influence of an axial magnetic field applied to improve the confinement of the plasma stream. An increase by a factor of 3.4 in the etch rate was verified when the magnetic field increased from 2.5 to 6.0 mT. Raman spectra features (line shapes, frequencies and line width) of the etched films were compared with those obtained before etching. The results show that this plasma jet etching is a reliable technique for DLC film processing. (C) 2000 Elsevier Science S.A. All rights reserved.