DEFINED ETCHING OF CARBON-DIAMOND FILMS ON SILICON USING AN OXYGEN PLASMA WITH TITANIUM MASKING

被引：12
|
作者：
CHAN, KK [1 ]
AMARATUNGA, GAJ [1 ]
WONG, TKS [1 ]
机构：
[1] UNIV CAMBRIDGE, DEPT ENGN, CAMBRIDGE CB2 1PZ, ENGLAND
来源：
DIAMOND AND RELATED MATERIALS | 1992年 / 1卷 / 2-4期
关键词：
D O I：
10.1016/0925-9635(92)90040-U
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A technique for pattern transfer onto carbon-diamond films deposited by radio-frequency plasma-enhanced chemical vapour deposition is reported. Such a technique involves standard photolithography processes and reactive ion etching by oxygen and is compatible with present day microelectronic technology. The patterns transferred are well defined with very good resolution. © 1992.
引用
收藏
页码：281 / 284
页数：4
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