Clean and polymer-free transfer of CVD-grown graphene films on hexagonal boron nitride substrates

被引：4

作者：

Fujihara, Miho ^{[1
,2
]}

Ogawa, Shun ^{[3
]}

Yoshimura, Shintaro ^{[3
]}

Inoue, Ryosuke ^{[3
]}

Maniwa, Yutaka ^{[3
]}

Taniguchi, Takashi ^{[4
]}

Watanabe, Kenji ^{[4
]}

Shinohara, Hisanori ^{[1
,2
]}

Miyata, Yasumitsu ^{[3
,5
]}

机构：

[1] Nagoya Univ, Dept Chem, Nagoya, Aichi 4648602, Japan

[2] Nagoya Univ, Inst Adv Res, Nagoya, Aichi 4648602, Japan

[3] Tokyo Metropolitan Univ, Dept Phys, Hachioji, Tokyo 1920397, Japan

[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[5] JST, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 05期

基金：

日本学术振兴会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; SINGLE-CRYSTAL GRAPHENE; HIGH-QUALITY; STRAIN;

D O I：

10.7567/JJAP.56.055102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This report describes the development of a solution-assisted, polymer-free transfer method and the characterization of chemical vapor deposition (CVD)-grown graphene on hexagonal boron nitride. Raman analysis reveals that polymer-free samples have small variations in G-and 2D-mode Raman frequencies and are minimally affected by charge doping as observed for clean exfoliated graphene. Electrical measurements indicate that charge doping, hysteresis, and carrier scattering are suppressed in polymer-free samples. The results demonstrate that this method provides a simple and effective way to prepare clean heterostructures of CVD-grown, large-area graphene and other two-dimensional materials. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

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