Clean and polymer-free transfer of CVD-grown graphene films on hexagonal boron nitride substrates

被引:4
|
作者
Fujihara, Miho [1 ,2 ]
Ogawa, Shun [3 ]
Yoshimura, Shintaro [3 ]
Inoue, Ryosuke [3 ]
Maniwa, Yutaka [3 ]
Taniguchi, Takashi [4 ]
Watanabe, Kenji [4 ]
Shinohara, Hisanori [1 ,2 ]
Miyata, Yasumitsu [3 ,5 ]
机构
[1] Nagoya Univ, Dept Chem, Nagoya, Aichi 4648602, Japan
[2] Nagoya Univ, Inst Adv Res, Nagoya, Aichi 4648602, Japan
[3] Tokyo Metropolitan Univ, Dept Phys, Hachioji, Tokyo 1920397, Japan
[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[5] JST, PRESTO, Kawaguchi, Saitama 3320012, Japan
基金
日本学术振兴会;
关键词
CHEMICAL-VAPOR-DEPOSITION; SINGLE-CRYSTAL GRAPHENE; HIGH-QUALITY; STRAIN;
D O I
10.7567/JJAP.56.055102
中图分类号
O59 [应用物理学];
学科分类号
摘要
This report describes the development of a solution-assisted, polymer-free transfer method and the characterization of chemical vapor deposition (CVD)-grown graphene on hexagonal boron nitride. Raman analysis reveals that polymer-free samples have small variations in G-and 2D-mode Raman frequencies and are minimally affected by charge doping as observed for clean exfoliated graphene. Electrical measurements indicate that charge doping, hysteresis, and carrier scattering are suppressed in polymer-free samples. The results demonstrate that this method provides a simple and effective way to prepare clean heterostructures of CVD-grown, large-area graphene and other two-dimensional materials. (C) 2017 The Japan Society of Applied Physics
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页数:4
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