Spin injection with Fe/InAs hybrid structure

被引：0
|
作者：
Ohno, H [1 ]
Yoh, K
Katano, Y
Sueoka, K
Mukasa, K
机构：
[1] Hokkaido Univ, Grad Sch Engn, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan
来源：
COMPOUND SEMICONDUCTORS 2001 | 2002年 / 170期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have succeeded in injection of spin-polarized electrons from Fe thin film into InAs. Fe thin film was grown by molecular beam epitaxy (MBE) on InAs(100) substrate at 23 degreesC. The Fe/InAs hybrid structure showed decent magnetic and electronic property. The spin polarization of injected electrons was estimated from the polarization of electroluminesce. 3.6 similar to 4.1% of polarization of the luminescence was obtained. Present result of the highest spin injection efficiency to date indicates that the present ferromagnet/InAs hybrid system is promising for spintronics applications.
引用
收藏
页码：275 / 280
页数：6
相关论文
共 50 条
  • [1] High quality Fe3-δO4/InAs hybrid structure for electrical spin injection
    Ferhat, Marhoun
    Yoh, Kanji
    APPLIED PHYSICS LETTERS, 2007, 90 (11)
  • [2] Spin injection through an Fe/InAs interface
    Zwierzycki, M
    Xia, K
    Kelly, PJ
    Bauer, GEW
    Turek, I
    PHYSICAL REVIEW B, 2003, 67 (09)
  • [3] Spin-injection through an Fe/InAs interface
    Zwierzycki, M
    Xia, K
    Kelly, PJ
    Bauer, GEW
    Turek, I
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 196 (01): : 25 - 28
  • [4] Spin-polarized electron injection through an Fe/InAs junction
    Ohno, H
    Yoh, K
    Sueoka, K
    Mukasa, K
    Kawaharazuka, A
    Ramsteiner, ME
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (2A): : L87 - L89
  • [5] Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure
    Lee, Tae Hwan
    Koo, Hyun Cheol
    Kim, Kyung Ho
    Kim, Hyung-Jun
    Chang, Joon Yeon
    Han, Suk-Hee
    Hong, Jinki
    Lim, Sang Ho
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2009, 321 (22) : 3795 - 3798
  • [6] Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices
    Crooker, S.A.
    Furis, M.
    Lou, X.
    Crowell, P.A.
    Smith, D.L.
    Adelmann, C.
    Palmstrøm, C.J.
    Journal of Applied Physics, 2007, 101 (08):
  • [7] Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices
    Crooker, S. A.
    Furis, M.
    Lou, X.
    Crowell, P. A.
    Smith, D. L.
    Adelmann, C.
    Palmstrom, C. J.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (08)
  • [8] Direct spin injection from a ferromagnetic metal into a semiconductor through Fe/InAs junction
    Yoh, K
    Ohno, H
    Katano, Y
    Sueoka, K
    Mukasa, K
    TOWARDS THE CONTROLLABLE QUANTUM STATES: MESOSCOPIC SUPERCONDUCTIVITY AND SPINTRONICS, 2003, : 22 - 26
  • [9] Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection
    Yoh, K
    Ohno, H
    Sueoka, K
    Ramsteiner, ME
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1432 - 1435
  • [10] Spin injection due to interfacial spin asymmetry in a ferromagnet- semiconductor hybrid structure
    Bala Kumar, S.
    Tan, S.G.
    Jalil, M.B.A.
    Jiang, Yong
    Journal of Applied Physics, 2007, 102 (08):
12345