Spin injection with Fe/InAs hybrid structure

被引：0
|
作者：
Ohno, H [1 ]
Yoh, K
Katano, Y
Sueoka, K
Mukasa, K
机构：
[1] Hokkaido Univ, Grad Sch Engn, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan
来源：
COMPOUND SEMICONDUCTORS 2001 | 2002年 / 170期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have succeeded in injection of spin-polarized electrons from Fe thin film into InAs. Fe thin film was grown by molecular beam epitaxy (MBE) on InAs(100) substrate at 23 degreesC. The Fe/InAs hybrid structure showed decent magnetic and electronic property. The spin polarization of injected electrons was estimated from the polarization of electroluminesce. 3.6 similar to 4.1% of polarization of the luminescence was obtained. Present result of the highest spin injection efficiency to date indicates that the present ferromagnet/InAs hybrid system is promising for spintronics applications.
引用
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页码：275 / 280
页数：6
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