Spin injection due to interfacial spin asymmetry in a ferromagnet- semiconductor hybrid structure

被引：0
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作者：
Bala Kumar, S. [1 ]
Tan, S.G. [2 ]
Jalil, M.B.A. [1 ]
Jiang, Yong [3 ]
机构：
[1] Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore
[2] Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608, Singapore
[3] State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China
来源：
Journal of Applied Physics | 2007年 / 102卷 / 08期
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