Backside Alpha-Irradiation Test in Flip-Chip Package in EUV 7 nm FinFET SRAM

被引：4

作者：

Uemura, Taiki ^{[1
]}

Chung, Byungjin ^{[1
]}

Jo, Jeongmin ^{[1
]}

Jiang, Hai ^{[1
]}

Ji, Yongsung ^{[1
]}

Jeong, Tae-Young ^{[1
]}

Ranjan, Rakesh ^{[1
]}

Lee, Seungbae ^{[1
]}

Rhee, Hwasung ^{[1
]}

Pae, Sangwoo ^{[1
]}

Lee, Euncheol ^{[1
]}

Choi, Jaehee ^{[2
]}

Ohnishi, Shota ^{[3
]}

Machida, Ken ^{[3
]}

机构：

[1] Samsung Elect Co Ltd, Samsung Foundry, Suwon, South Korea

[2] Samsung Elect Co Ltd, Semicond Res & Dev Ctr, Suwon, South Korea

[3] Samsung R&D Inst Japan, Yokohama, Kanagawa, Japan

来源：

2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2020年

关键词：

soft error; 7 nm FinFET; SRAM; SER; SEU;

D O I：

10.1109/irps45951.2020.9129331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes an alternative method of alpha-irradiation test in flip-chip packages, backside irradiation test in EUV 7nm FinFET SRAM. The backside-test is conducted in backside-ground flip-chips. The sample thickness is measured, and the correlation factor is calculated by Monte-Carlo simulations. The results of backside- and front-side-tests show the dependability of the proposed method.

引用

页数：4

共 26 条

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