Comparison of C doping technique between SiC and C targets for high-photoresponsivity BaSi2 films by radio-frequency sputtering

被引：5

作者：

Nemoto, Taira ^{[1
]}

Koitabashi, Ryota ^{[1
]}

Mesuda, Masami ^{[2
]}

Toko, Kaoru ^{[3
]}

Suemasu, Takashi ^{[3
]}

机构：

[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[2] Tosoh Corp, Adv Mat Res Lab, Ayase, Kanagawa 2521123, Japan

[3] Univ Tsukuba, Fac Pure & Appl Sci, Dept Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / 05期

关键词：

photoresponsivity; barium disilicide; sputtering; doping; SiC;

D O I：

10.35848/1347-4065/abf317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-photoresponsivity BaSi2 films is of great importance for solar cell applications. The photoresponsivity was enhanced greatly in C-doped BaSi2 films formed by sputtering BaSi2 and SiC or C targets. The shift of Raman peak and optical absorption edge with increasing C concentration (n(C)) showed that more C atoms were incorporated in BaSi2 films when the SiC target was sputtered. When n(C) was 6 x 10(20) cm(-3) by the SiC target, the photoresponsivity approached 2 A W-1 under a bias voltage of 0.1 V between the top and bottom electrodes. This is the highest value ever reported for BaSi2 films.

引用

页数：3

共 46 条

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