Comparison of C doping technique between SiC and C targets for high-photoresponsivity BaSi2 films by radio-frequency sputtering

被引：5
|
作者：
Nemoto, Taira [1 ]
Koitabashi, Ryota [1 ]
Mesuda, Masami [2 ]
Toko, Kaoru [3 ]
Suemasu, Takashi [3 ]
机构：
[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan
[2] Tosoh Corp, Adv Mat Res Lab, Ayase, Kanagawa 2521123, Japan
[3] Univ Tsukuba, Fac Pure & Appl Sci, Dept Appl Phys, Tsukuba, Ibaraki 3058573, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / 05期
关键词：
photoresponsivity; barium disilicide; sputtering; doping; SiC;
D O I：
10.35848/1347-4065/abf317
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-photoresponsivity BaSi2 films is of great importance for solar cell applications. The photoresponsivity was enhanced greatly in C-doped BaSi2 films formed by sputtering BaSi2 and SiC or C targets. The shift of Raman peak and optical absorption edge with increasing C concentration (n(C)) showed that more C atoms were incorporated in BaSi2 films when the SiC target was sputtered. When n(C) was 6 x 10(20) cm(-3) by the SiC target, the photoresponsivity approached 2 A W-1 under a bias voltage of 0.1 V between the top and bottom electrodes. This is the highest value ever reported for BaSi2 films.
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页数：3
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