Indium doped nMOSFETs and buried channel pMOSFETs with n(+) polysilicon gate

被引：5
|
作者：
Lee, YT
Song, KW
Park, BG
Lee, JD
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3B期
关键词：
indium; doping; nMOSFET; pMOSFET; SSR; counter; BC; incomplete; ionization; diffusivity;
D O I：
10.1143/JJAP.36.1341
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the properties of indium for channel doping engineering. We have fabricated 0.1 mu m super-steep-retrograde (SSR) channel nMOSFETs and buried channel pMOSFETs with an indium counter doping layer. It is found that: (1) Indium is a promising channel dopant when it is implanted into a sub-surface with relatively high energy and its steep profile is maintained throughout the entire process of SSR nMOSFETs, (2) However, it is not practical as a dopant for near-surface p-type conduction layers such as buried channels or p(-) LDDs in pMOSFETs due to its incomplete ionization and high diffusivity in oxide.
引用
收藏
页码：1341 / 1345
页数：5
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