Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory

被引：35
|
作者：
Petzold, Stefan [1 ]
Sharath, S. U. [1 ]
Lemke, Jonas [1 ]
Hildebrandt, Erwin [1 ]
Trautmann, Christina [2 ,3 ]
Alff, Lambert [1 ]
机构：
[1] Tech Univ Darmstadt, Inst Mat Sci, Dept Adv Thin Film Technol, D-64287 Darmstadt, Germany
[2] GSI Helmholtzzentrum Schwerionenforsch, Mat Res Dept, D-64291 Darmstadt, Germany
[3] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2019年 / 66卷 / 07期
关键词：
Data retention; hafnium oxide; heavy ions; HfO; irradiation; MIM devices; nonvolatile memory (NVM); radiation effects basic mechanisms; resistive random access memory (RRAM); resistive switching; space radiation effects; total dose effects; THIN-FILMS; IRRADIATION; ZIRCONIA;
D O I：
10.1109/TNS.2019.2908637
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hafnium oxide-based resistive random access memory (RRAM) (TiN/HfO2-x/Pt/Au) stacks were irradiated with 1.1-GeV Au ions with fluences between 10(10) and 10(12) ions/cm(2) and evaluated regarding pristine resistance, forming voltage, and data retention. Only for the highest fluence, the resistance of the pristine state and, in turn, the conducting filament electroforming, as well as the reset voltage, increased. Even for fluences as high as 10(12) ions/cm(2), only a negligible percentage of the tested devices shows event upsets indicating extremely high data retention of hafnium oxide-based RRAM toward high-energy ionizing radiation.
引用
收藏
页码：1715 / 1718
页数：4
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