Multi-channel SOI lateral IGBTs with large SOA

We report, for the first time, the development of 5 ampere multi-channel lateral IGBTs on SOI. The new LIGBTs are characterized by plural number of parallel stripe poly-silicon gates and resultant plural number of channels, which enhances electron injection and attains a large current capability. The developed LIGBTs conduct the current density over 120 A/cm(2) at the drain voltage of 3V and simultaneously achieve the fall-time below 300ns. The LIGBTs have excellent current capability and short circuit withstanding capability of DC300V with 500 A/cm(2) of drain current even at 200 degrees C.