A read-disturb-free and write-ability enhanced 9T SRAM with data-aware write operation

This paper presents a single-ended 9T SRAM cell with data-aware write-word-line structure to improve write ability, and a positive feedback sense amplifier (SA) to solve sensing challenge at an ultra-low voltage. The proposed 9T cell is well suited for bit-interleaving architecture in SRAM array. Simulation results indicate that at a 0.5 V supply voltage, the proposed SRAM cell achieves the same read static noise margin (RSNM) as that of conventional 8T SRAM cell, because the read-decoupled read buffer achieves read-disturb-free operation. While at the same supply voltage, its write margin (WM) is 2.68x compared with the 8T SRAM cell. As a result, a lower minimum operation voltage is achieved. Additionally, its leakage power consumption is reduced by 86.1% compared with the 8T SRAM cell in the 40-nm standard CMOS technology, TT corner, 25 degrees C.