Preferentially Oriented Growth of Al Thin Films Deposited Rapidly on Si (100) and (111) Substrates

被引：2

作者：

Sugawara, Shigeo ^{[1
]}

Takahashi, Hisao ^{[1
]}

Ishigaki, Masatoshi ^{[1
]}

Goto, Daisuke ^{[1
]}

Komori, Daisuke ^{[1
]}

机构：

[1] Akita Univ, Facul Engn & Resource Sci, Dept Mat Sci & Engn, Akita 0108502, Japan

来源：

JOURNAL OF THE JAPAN INSTITUTE OF METALS | 2009年 / 73卷 / 12期

关键词：

aluminum; silicon wafer; thin film; vapor deposition; epitaxial growth; X-ray diffraction; transmission electron microscopy; IONIZED-CLUSTER BEAM; EPITAXIAL-GROWTH; SI(100); SI(111);

D O I：

10.2320/jinstmet.73.906

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

It has been believed that preferentially oriented growth of Al scarcely occurs on Si substrates in an ordinary high vacuum (10(-3) Pa). In order to examine the effect of rapid deposition on the epitaxial growth, we try the evaporation of Al from dual sources of W baskets onto Si (100) and (111) substrates which are heated in an ordinary high vacuum. From the inspection of the Al films 100 to 200 nm in thickness by transmission electron microscopy, it is found that double-positioned {110} grains and (111) ones grow preferentially on the (100) and (111) substrates, respectively, heated at about 600 K.

引用

页码：906 / 912

页数：7

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