Growth of Highly (100)-Oriented SrTiO3 Thin Films on Si(111) Substrates Without Buffer Layer

被引：3
|
作者：
Panomsuwan, Gasidit [1 ]
Takai, Osamu [2 ]
Saito, Nagahiro [1 ,3 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Dept Mat Phys & Energy Engn, Nagoya, Aichi 4648603, Japan
[2] Kanto Gakuin Univ, Mat & Surface Engn Res Inst, Yokohama, Kanagawa 2360004, Japan
[3] Nagoya Univ, Green Mobil Collaborat Res Ctr, Nagoya, Aichi 4648603, Japan
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2014年 / 97卷 / 05期
关键词：
MEMORY APPLICATIONS; SILICON; INTERFACE; OXIDE;
D O I：
10.1111/jace.12912
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The SrTiO3 (STO) thin films were directly grown on Si(111) substrates without buffer layer by an electron-cyclotron-resonance ion beam sputter deposition. The growth temperature was varied from 700 degrees C to 850 degrees C, while other parameters were kept unchanged. X-ray structural analysis demonstrates that the growth temperature has a strong influence in tuning degree of (100) orientation. The STO film grown at 800 degrees C is found to be the highest degree of (100) orientation (98%) and a strong (100) fiber texture. For the surface morphology, the development of plate-shaped grains reveals a good correlation with the change in the degree of (100) orientation. Moreover, the leakage current-voltage characteristics of the Au/STO/Si(111) metal-insulator-semiconductor capacitors are investigated and discussed in considerable detail.
引用
收藏
页码：1383 / 1385
页数：3
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