Growth of Highly (100)-Oriented SrTiO3 Thin Films on Si(111) Substrates Without Buffer Layer

被引：3

作者：

Panomsuwan, Gasidit ^{[1
]}

Takai, Osamu ^{[2
]}

Saito, Nagahiro ^{[1
,3
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Phys & Energy Engn, Nagoya, Aichi 4648603, Japan

[2] Kanto Gakuin Univ, Mat & Surface Engn Res Inst, Yokohama, Kanagawa 2360004, Japan

[3] Nagoya Univ, Green Mobil Collaborat Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2014年 / 97卷 / 05期

关键词：

MEMORY APPLICATIONS; SILICON; INTERFACE; OXIDE;

D O I：

10.1111/jace.12912

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The SrTiO3 (STO) thin films were directly grown on Si(111) substrates without buffer layer by an electron-cyclotron-resonance ion beam sputter deposition. The growth temperature was varied from 700 degrees C to 850 degrees C, while other parameters were kept unchanged. X-ray structural analysis demonstrates that the growth temperature has a strong influence in tuning degree of (100) orientation. The STO film grown at 800 degrees C is found to be the highest degree of (100) orientation (98%) and a strong (100) fiber texture. For the surface morphology, the development of plate-shaped grains reveals a good correlation with the change in the degree of (100) orientation. Moreover, the leakage current-voltage characteristics of the Au/STO/Si(111) metal-insulator-semiconductor capacitors are investigated and discussed in considerable detail.

引用

页码：1383 / 1385

页数：3

共 50 条

[31] Roles of buffer layers in epitaxial growth of SrTiO3 films on silicon substrates
Moon, Bum Ki
Ishiwara, Hiroshi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (3 A): : 1472 - 1477
[32] Growth of ultrathin YBaCuO films on (100) SrTiO3 and MgO substrates
Linker, G
Huttner, D
Meyer, O
Reiner, J
APPLIED SUPERCONDUCTIVITY 1995, VOLS. 1 AND 2: VOL 1: PLENARY TALKS AND HIGH CURRENT APPLICATIONS; VOL 2: SMALL SCALE APPLICATIONS, 1995, 148 : 835 - 838
[33] Growth of highly oriented Pt(100) thin films on a MgO(100) seed layer deposited on Si(100) substrates by rf magnetron sputtering
Lee, Chang-Seung
Chung, Sung-Woong
Kim, Yong-Chun
Chung, In-Seop
Wee, Dang-Moon
Lee, Won-Jong
Surface and Coatings Technology, 1997, 90 (03): : 229 - 233
[34] Growth of highly oriented Pt(100) thin films on a MgO(100) seed layer deposited on Si(100) substrates by rf magnetron sputtering
Lee, CS
Chung, SW
Kim, YC
Chung, IS
Wee, DM
Lee, WJ
SURFACE & COATINGS TECHNOLOGY, 1997, 90 (03): : 229 - 233
[35] Structural and dielectric properties of epitaxial SrTiO3 films grown on Si(100) substrate with TiN buffer layer
Lee, MB
Koinuma, H
JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) : 2358 - 2362
[36] Chemical Solution Deposition of <100>-oriented SrTiO3 Buffer Layers on Ni Substrates
J T Dawley
R. J. Ong
P. G. Clem
Journal of Materials Research, 2002, 17
[37] Growth behaviour of ZnO thin films and nanowires on SrTiO3 substrates
Kim, D.-W.
Shin, S.
Kim, Y.
Chang, S. H.
Chang, Y. J.
Kim, M.
Jeong, H.
SOLID STATE COMMUNICATIONS, 2007, 143 (03) : 140 - 143
[38] Surface engineering of SrTiO3 (111) substrates for the epitaxial growth of BLT films
Suh, JH
Lee, YS
Park, CG
ELECTRON MICROSCOPY OF MOLECULAR AND ATOM-SCALE MECHANICAL BEHAVIOR, CHEMISTRY AND STRUCTURE, 2005, 839 : 85 - 90
[39] Highly oriented SrTiO3 thin film on Si deposited by magnetron sputtering
Wang, Y
Chan, HLW
Cheng, YL
Choy, CL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (03): : 825 - 826
[40] MOCVD growth of epitaxial SrIrO3 films on (111)SrTiO3 substrates
Sumi, A
Kim, YK
Oshima, N
Akiyama, K
Saito, K
Funakubo, H
THIN SOLID FILMS, 2005, 486 (1-2) : 182 - 185

← 1 2 3 4 5 →