Preparation of preferentially (111)-oriented Mg2Si thin films on (001)Al2O3 and (100)CaF2 substrates and their thermoelectric properties

被引：9

作者：

Kurokawa, Mao ^{[1
]}

Uehara, Mutsuo ^{[1
]}

Ichinose, Daichi ^{[2
]}

Shimizu, Takao ^{[3
]}

Akiyama, Kensuke ^{[1
,4
]}

Matsushima, Masaaki ^{[1
]}

Uchida, Hiroshi ^{[5
]}

Kimura, Yoshisato ^{[2
]}

Funakubo, Hiroshi ^{[1
,2
,3
]}

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Sch Mat & Chem Technol, Yokohama, Kanagawa 2268502, Japan

[3] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Yokohama, Kanagawa 2268502, Japan

[4] Kanagawa Ind Technol Ctr, Ebina, Kanagawa 2430435, Japan

[5] Sophia Univ, Dept Mat & Life Sci, Chiyoda Ku, Tokyo, 1028554, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 05期

基金：

日本学术振兴会;

关键词：

TRANSPORT-PROPERTIES; THERMAL-EXPANSION; DEFECTS; STRAINS; LATTICE; MG;

D O I：

10.7567/JJAP.56.05DC02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mg2Si thin films were deposited at 320 degrees C on (001) Al2O3 and (100) CaF2 substrates by radio-frequency magnetron sputtering. Both films showed a preferential (111) out-of-plane orientation with an in-plane random orientation irrespective of post-heat treatment. Mg2Si films on (001) Al2O3 substrates were under in-plane tensile strain, while those on (100) CaF2 substrates were under in-plane compressive strain both before and after heat treatment. Heat-treated films showed p-type conduction up to 500 degrees C. Their electrical conductivity and Seebeck coefficient were almost independent of the kind of substrate within the limit of the present study, from 0.22% compressive strain to 0.34% tensile strain at room temperature. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[1] Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties
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[2] Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties
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[3] Electrical conduction in CaF2 and CaF2-Al2O3 nanocomposite films on Al2O3 substrates
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MITCHELL, A
JOSHI, S
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