Fabrication of Dual-Barrier Planar Structure Diamond Schottky Diodes by Rapid Thermal Annealing

被引：7

作者：

Wang, Juan ^{[1
]}

Zhao, Dan ^{[1
]}

Shao, Guoqing ^{[1
]}

Liu, Zhangcheng ^{[1
]}

Chang, Xiaohui ^{[1
]}

Chen, Genqiang ^{[1
]}

Wang, Wei ^{[1
]}

Yi, Wenyang ^{[1
]}

Wang, Kaiyue ^{[2
]}

Wang, Hongxing ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Peoples R China

[2] Taiyuan Univ Sci & Technol, Sch Mat Sci & Engn, Taiyuan 030024, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 03期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

Diamond; dual-barrier; power dissipation; rapid thermal annealing (RTA); Schottky barrier diodes (SBDs);

D O I：

10.1109/TED.2020.3048923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fabrication of dual-barrier planar (DBP) structure diamond Schottky barrier diodes (SBDs) with only Ni Schottky contact was carried out by rapid thermal annealing. Ni/Au narrow stripes were first patterned on p(-) layer and annealed at 550 degrees C to decrease Schottky barrier height and form low barrier contact. Then, Ni/Au Schottky electrodes were deposited on the window area between stripes to serve as high barrier contact. Ti/Pt/Au ohmic contact was formed on the back side of p(+) diamond substrate. The fabricated DBP structure SBDs exhibit low forward voltage drops compared with single high barrier diode, and reverse leakage current densities of two to three orders of magnitude smaller than that of single low barrier diode. The influence of stripes area proportion on device properties was investigated and the barrier height can be adjusted by changing dual-barrier ratio. This new device structure displays a small power dissipation of 0.54 W/cm(2), which is a promising technology for high power diamond diodes.

引用

页码：1176 / 1180

页数：5

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