BARRIER HEIGHT ENHANCEMENT IN WSIX/GAAS SCHOTTKY DIODES BY RAPID THERMAL ANNEALING

被引：0
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作者：
OSVALD, J
LALINSKY, T
机构：
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1993年 / 4卷 / 04期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of rapid thermal annealing on WSi2/GaAs and WSi0.6/GaAs Schottky diodes was studied by means of Rutherford backscattering spectroscopy (RBS), particle induced X-ray emission spectroscopy (PIXE), X-ray diffraction (XRD) analysis and current-voltage electrical measurement. Despite the amorphicity of the layers remaining after annealing and only relatively minor changes in RBS and PIXE spectra, large barrier enhancements were registered, especially for WSi2/GaAs diodes.For an explanation of this effect, the barrier height inhomogeneity concept is used.
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页码：267 / 270
页数：4
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