BARRIER HEIGHT ENHANCEMENT IN WSIX/GAAS SCHOTTKY DIODES BY RAPID THERMAL ANNEALING

被引：0
|
作者：
OSVALD, J
LALINSKY, T
机构：
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1993年 / 4卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of rapid thermal annealing on WSi2/GaAs and WSi0.6/GaAs Schottky diodes was studied by means of Rutherford backscattering spectroscopy (RBS), particle induced X-ray emission spectroscopy (PIXE), X-ray diffraction (XRD) analysis and current-voltage electrical measurement. Despite the amorphicity of the layers remaining after annealing and only relatively minor changes in RBS and PIXE spectra, large barrier enhancements were registered, especially for WSi2/GaAs diodes.For an explanation of this effect, the barrier height inhomogeneity concept is used.
引用
收藏
页码：267 / 270
页数：4
相关论文
共 50 条
  • [21] BARRIER HEIGHT VARIATION IN AL/GAAS SCHOTTKY DIODES WITH A THIN SILICON INTERFACIAL LAYER
    COSTA, JC
    WILLIAMSON, F
    MILLER, TJ
    BEYZAVI, K
    NATHAN, MI
    MUI, DSL
    STRITE, S
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1991, 58 (04) : 382 - 384
  • [22] INTERFACE STATES AND THE BARRIER HEIGHT OF SCHOTTKY DIODES
    WITTMER, M
    FREEOUF, JL
    PHYSICS LETTERS A, 1993, 173 (02) : 190 - 194
  • [23] On the effective barrier height in inhomogeneous Schottky diodes
    Osvald, J.
    2018 12TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM), 2018, : 125 - 128
  • [24] BARRIER HEIGHT MODIFICATION IN SCHOTTKY MIS DIODES
    SHOUSHA, AHM
    PHYSICS LETTERS A, 1982, 92 (06) : 293 - 296
  • [25] Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky barrier diodes by Tung model
    Soylu, Murat
    Yakuphanoglu, Fahrettin
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 506 (01) : 418 - 422
  • [26] THERMAL ANNEALING BEHAVIOR OF PROTON-IRRADIATED AU-TI-GAAS AND AL-GAAS SCHOTTKY-BARRIER DIODES
    EJIMANYA, JI
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1987, 62 (03) : 461 - 471
  • [27] RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS
    NOBILI, C
    BOSI, M
    OTTAVIANI, G
    QUEIROLO, G
    BACCI, L
    APPLIED SURFACE SCIENCE, 1991, 53 : 219 - 223
  • [28] BARRIER HEIGHT ENHANCEMENT OF TRIANGULAR BARRIER DIODES
    GUPTA, RS
    CHILANA, GS
    SRIVASTAVA, GP
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (12) : 4103 - 4107
  • [29] RAPID THERMAL ANNEALING OF TI SCHOTTKY CONTACTS TO N-GAAS
    PRASAD, K
    FARAONE, L
    NASSIBIAN, AG
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1991, 2 (04) : 227 - 229
  • [30] Schottky Barrier Height in Fe/GaAs Films
    Fleet, L. R.
    Yoshida, K.
    Kobayashi, H.
    Ohno, Y.
    Kurebayashi, H.
    Kim, J. -Y.
    Barnes, C. H. W.
    Hirohata, A.
    IEEE TRANSACTIONS ON MAGNETICS, 2010, 46 (06) : 1737 - 1740
12345