THERMAL ANNEALING BEHAVIOR OF PROTON-IRRADIATED AU-TI-GAAS AND AL-GAAS SCHOTTKY-BARRIER DIODES

被引：0
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作者：
EJIMANYA, JI
机构：
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1987年 / 62卷 / 03期
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D O I：
10.1080/00207218708920997
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：461 / 471
页数：11
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