Spatially-resolved imaging of microprocessor power (SIMP): Hotspots in microprocessors.

被引:0
|
作者
Hamann, Hendrik F. [1 ]
Lacey, James [1 ]
Weger, Alan [1 ]
Wakil, Jamil [2 ]
机构
[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] IBM Syst & Technol Grp, Fishkill, NY 12533 USA
来源
2006 PROCEEDINGS 10TH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONICS SYSTEMS, VOLS 1 AND 2 | 2006年
关键词
microprocessor power; thermal management; pack-age design; hotspots; high power density chips;
D O I
暂无
中图分类号
O414.1 [热力学];
学科分类号
摘要
In this paper we present the details of a new technique, which allows for spatially-resolved imaging of microprocessor power (SIMP) under full operational conditions. The method involves two steps: In the first step it utilizes infra-red (IR) thermal imaging, while an IR-transparent coolant flows through a specially designed cooling cell directly over the microprocessor. In the second step the underlying power distribution is derived by determining the temperature fields for each individual power source on the chip. The measured chip temperature distribution is then represented as a superposition of these temperature fields. The SIMP data reveals significant temporal and spatial variations of the microprocessor power/temperature distribution, which can be attributed to the circuit layout as well as to the varying utilization levels across the processor while running real work-loads. More specifically, strong non-uniformities or hotspots in the microprocessor power distributions are observed, which have significant implications for pack-aging and cooling designs.
引用
收藏
页码:121 / +
页数:2
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