Transition between Electron Localization and Antilocalization in Graphene

被引：283

作者：

Tikhonenko, F. V. ^{[1
]}

Kozikov, A. A. ^{[1
]}

Savchenko, A. K. ^{[1
]}

Gorbachev, R. V. ^{[1
]}

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 22期

基金：

英国工程与自然科学研究理事会;

关键词：

WEAK-LOCALIZATION; GAS;

D O I：

10.1103/PhysRevLett.103.226801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that quantum interference in graphene can result in antilocalization of charge carriers-an increase of the conductance, which is detected by a negative magnetoconductance. We demonstrate that depending on experimental conditions one can observe either weak localization or antilocalization of carriers in graphene. A transition from localization to antilocalization occurs when the carrier density is decreased and the temperature is increased. We show that quantum interference in graphene can survive at high temperatures, up to T similar to 200 K, due to weak electron-phonon scattering.

引用

页数：4

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