Observation of electron weak localization and correlation effects in disordered graphene

被引：0
|
作者：
TAN ChangLing TAN ZhenBing MA Li QU FanMing YANG Fan CHEN Jun LIU GuangTong YANG HaiFang YANG ChangLi LU Li Daniel Chee Tsui Laboratory Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing China Laboratory of Microfabrication Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing China [1 ,1 ,1 ,1 ,1 ,1 ,1 ,2 ,1 ,1 ,1 ,100190 ,2 ,100190 ]
机构：
来源：
Science in China(Series G:Physics,Mechanics & Astronomy) | 2009年 / 09期
关键词：
D O I：
暂无
中图分类号：
O481 [固体理论];
学科分类号：
摘要：
We have studied the electron transport properties of a disordered graphene sample, where the disorder was intentionally strengthened by Ga+ ion irradiation. The magneto-conductance of the sample exhibits a typical two-dimensional electron weak localization behavior, with electron-electron interaction as the dominant dephasing mechanism. The absence of electron anti-weak localization in the sample implies strong intersublattice and/or intervalley scattering caused by the disorders. The temperature and bias-voltage dependencies of conductance clearly reveal the suppression of conductance at low energies, indicating opening of a Coulomb gap due to electron-electron interaction in the disordered graphene sample.
引用
收藏
页码：1293 / 1298
页数：6
相关论文
共 50 条
  • [1] Observation of electron weak localization and correlation effects in disordered graphene
    ChangLing Tan
    ZhenBing Tan
    Li Ma
    FanMing Qu
    Fan Yang
    Jun Chen
    GuangTong Liu
    HaiFang Yang
    ChangLi Yang
    Li Lu
    Science in China Series G: Physics, Mechanics and Astronomy, 2009, 52 : 1293 - 1298
  • [2] Observation of electron weak localization and correlation effects in disordered graphene
    TAN ChangLing1
    2 Laboratory of Microfabrication
    Science China(Physics,Mechanics & Astronomy), 2009, 52 (09) : 1293 - 1298
  • [3] Observation of electron weak localization and correlation effects in disordered graphene
    Tan ChangLing
    Tan ZhenBing
    Ma Li
    Qu FanMing
    Yang Fan
    Chen Jun
    Liu GuangTong
    Yang HaiFang
    Yang ChangLi
    Lu Li
    SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY, 2009, 52 (09): : 1293 - 1298
  • [4] Electron weak localization in disordered films
    Li, T
    Sheng, P
    PHYSICAL REVIEW B, 1996, 53 (20): : 13268 - 13271
  • [5] Electron weak localization in disordered films
    Li, T
    Sheng, P
    PHYSICA A, 1997, 241 (1-2): : 118 - 121
  • [6] A NEW TYPE OF ELECTRON WEAK LOCALIZATION IN DISORDERED MEDIA
    LIBENSON, BN
    PLATONOV, KY
    RUMYANTSEV, VV
    ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1992, 101 (02): : 614 - 628
  • [7] EFFECT OF ELECTRON CORRELATION ON LOCALIZATION IN DISORDERED MATERIALS
    TRIPATHI, RS
    MOSELEY, LL
    SOLID STATE COMMUNICATIONS, 1977, 21 (07) : 655 - 657
  • [8] Peculiarities of electron weak localization and electron-electron interaction effects in disordered platinum films with magnetic impurities
    Belevtsev, BI
    Kashirin, VY
    Komnik, YF
    Bobkov, VV
    FIZIKA NIZKIKH TEMPERATUR, 1996, 22 (03): : 327 - 336
  • [9] Magnetotransport in disordered graphene exposed to ozone: From weak to strong localization
    Moser, J.
    Tao, H.
    Roche, S.
    Alzina, F.
    Sotomayor Torres, C. M.
    Bachtold, A.
    PHYSICAL REVIEW B, 2010, 81 (20)
  • [10] Numerical study of weak localization effects in disordered cavities
    Bonci, L.
    Macucci, M.
    Iannaccone, G.
    Pala, M. G.
    NONEQUILIBRIUM CARRIER DYNAMICS IN SEMICONDUCTORS PROCEEDINGS, 2006, 110 : 55 - +
12345