Observation of electron weak localization and correlation effects in disordered graphene

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作者：
TAN ChangLing TAN ZhenBing MA Li QU FanMing YANG Fan CHEN Jun LIU GuangTong YANG HaiFang YANG ChangLi LU Li Daniel Chee Tsui Laboratory Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing China Laboratory of Microfabrication Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing China [1 ,1 ,1 ,1 ,1 ,1 ,1 ,2 ,1 ,1 ,1 ,100190 ,2 ,100190 ]
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Science in China(Series G:Physics,Mechanics & Astronomy) | 2009年 / 09期
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O481 [固体理论];
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摘要：
We have studied the electron transport properties of a disordered graphene sample, where the disorder was intentionally strengthened by Ga+ ion irradiation. The magneto-conductance of the sample exhibits a typical two-dimensional electron weak localization behavior, with electron-electron interaction as the dominant dephasing mechanism. The absence of electron anti-weak localization in the sample implies strong intersublattice and/or intervalley scattering caused by the disorders. The temperature and bias-voltage dependencies of conductance clearly reveal the suppression of conductance at low energies, indicating opening of a Coulomb gap due to electron-electron interaction in the disordered graphene sample.
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页码：1293 / 1298
页数：6
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