Weak localization in monolayer and bilayer graphene

被引:25
|
作者
Horsell, D. W. [1 ]
Tikhonenko, F. V. [1 ]
Gorbachev, R. V. [1 ]
Savchenko, A. K. [1 ]
机构
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
关键词
quantum interference; graphene; weak localization;
D O I
10.1098/rsta.2007.2159
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We demonstrate quantitative experimental evidence for a weak localization correction to the conductivity in monolayer and bilayer graphene systems. We show how inter- and intra-valley elastic scattering control the correction in small magnetic fields in a way which is unique to graphene. A clear difference in the forms of the correction is observed in the two systems, which shows the importance of the interplay between the elastic scattering mechanisms and how they can be distinguished. Our observation of the correction at zero-net carrier concentration in both systems is clear evidence of the inhomogeneity engendered into the graphene layers by disorder.
引用
收藏
页码:245 / 250
页数:6
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